2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratin.
mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 3390-93, Rev B 2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3300 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
2 | 2N3300 |
Central |
Small Signal Transistors | |
3 | 2N3300 |
Seme LAB |
Bipolar NPN Device | |
4 | 2N3300 |
New Jersey Semi-Conductor |
Transistor | |
5 | 2N3301 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
6 | 2N3301 |
Central Semiconductor |
Small Signal Transistors | |
7 | 2N3302 |
Motorola |
GENERAL PURPOSE TRANSISTOR | |
8 | 2N3302 |
New Jersey Semi-Conductor |
Transistor | |
9 | 2N3302 |
Central Semiconductor |
Small Signal Transistors | |
10 | 2N3303 |
Motorola |
NPN silicon annular transistor | |
11 | 2N3304 |
Motorola |
PNP silicon annular transistor | |
12 | 2N3307 |
Motorola |
GENERAL PURPOSE TRANSISTOR |