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Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg VALUE 100 100 7.0 15 7.0 100 200 - 65 to +200 UNITS V V V.
=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=4A, VCE=4V IC=10A, VCE=4V 100 100 7 1.0 V V V mA SYMBOL TEST CONDITION MIN MAX UNITS
Collector Cut off Current
20 5
5.0 0.7 5.0 1.1 3.0 2 100
mA mA V V
NPN POWER TRANSISTOR
2N3055HV
www.DataSheet4U.com
TO-3 Metal Can Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION Second Breakdown Collector Current with Base Forward Biased Dynamic Characteristics Transition Frequency
*Pulse Test: <300µ s, Duty Cycle =2%
SYMBOL IS/b
TEST CONDITION VCE=35V,t=1.0 sec, Nonrepetitive
MIN 2.87
MAX
UNITS A
fT
IC=0.5A, V.
2N3055HV - CDIL
Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3055H |
Multicomp |
15A Power Transistors |
|
| 2 | 2N3055H |
USHA |
Silicon Power Transistor |
|
| 3 | 2N3055H |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2N3055H |
Seme LAB |
Power Transistor |
|
| 5 | 2N3055 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N3055 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR |
|
| 7 | 2N3055 |
CENTRAL SEMICONDUCTOR |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 8 | 2N3055 |
SavantIC |
Silicon NPN Power Transistors |
|
| 9 | 2N3055 |
TAITRON |
NPN Power Transistor |
|
| 10 | 2N3055 |
NTE |
Silicon NPN Power Transistor |
|
| 11 | 2N3055 |
Aeroflex |
NPN Power Silicon Transistor |
|
| 12 | 2N3055 |
Multicomp |
Complementary Power Transistors |
|