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·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25.
ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB=0 IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 Is/b fT DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product IC.
2N3055 - Aeroflex
NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 (TO-20.
2N3055 - UTC
The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and s.
2N3055 - STMicroelectronics
The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and.
2N3055 - NTE
The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applicat.
2N3055 - ON Semiconductor
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistor.
2N3055 - CENTRAL SEMICONDUCTOR
The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial b.
2N3055 - Microsemi Corporation
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MA.
2N3055 - Multicomp
2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3053 |
Seme LAB |
MEDIUM POWER SILICON NPN PLANAR TRANSISTOR |
|
| 2 | 2N3053 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2N3053 |
Central |
Small Signal Transistors |
|
| 4 | 2N3053 |
CDIL |
NPN SILICON PLANAR TRANSISTOR |
|
| 5 | 2N3053 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 6 | 2N3053 |
TT |
MEDIUM POWER SILICON NPN TRANSISTOR |
|
| 7 | 2N3053A |
CDIL |
NPN SILICON PLANAR TRANSISTOR |
|
| 8 | 2N3053A |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 9 | 2N3054 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR |
|
| 10 | 2N3054 |
Seme LAB |
Bipolar NPN Device |
|
| 11 | 2N3054 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 12 | 2N3054 |
Comset Semiconductor |
Silicon Power Transistor |
|
