·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V.
fied SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB=0 VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ VEB= 7.0V; IC=0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 Is/b fT DC Current.
2N3055H 15A Power Transistors Features: • The 2N3055H is a Silicon power base transistor for high power audio, seriespas.
Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3055 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
2 | 2N3055 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR | |
3 | 2N3055 |
CENTRAL SEMICONDUCTOR |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
4 | 2N3055 |
SavantIC |
Silicon NPN Power Transistors | |
5 | 2N3055 |
TAITRON |
NPN Power Transistor | |
6 | 2N3055 |
NTE |
Silicon NPN Power Transistor | |
7 | 2N3055 |
Aeroflex |
NPN Power Silicon Transistor | |
8 | 2N3055 |
Multicomp |
Complementary Power Transistors | |
9 | 2N3055 |
Toshiba |
Silicon NPN Transistor | |
10 | 2N3055 |
MA-COM |
NPN Power Silicon Transistor | |
11 | 2N3055 |
ON Semiconductor |
Complementary Silicon Power Transistors | |
12 | 2N3055 |
UTC |
SILICON NPN TRANSISTORS |