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2N1191 thru 2N1194 (GERMANIUM) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Storage and. Operating Temperature Collector Dissipation in,Ambient (Derate 2.67 mWrC above 25°C) Th.
, IE'" L(} rnA) Symbol Min ICBO - lEBO - ICER - Cob - NF - Typ Max Unit - 15 /lAdc 2.0 - /lAdc - 15 /lAdc - 600 /lAdc 20 - pF 10 - dB 2N1l91 2N1l92 2N1l93 2N1l94 fab - - - - 1.5 - MHz 2.0 - 2.5 - 3.0 - 2-178 2Nl191 thru 2Nl194 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Small Signal Current Gain (VCE = 6 V, IE = 1.0 rnA, f = 1 kHz) 2N1l91 2N1l92 2N1l93 2N1l94 Symbol Min Typ Mu Unit hfe 30 40 70 - 50 75 125 100 160 250 190 280 500 DC Current Gain (VCE =lV,IC =10mA) 2N1l91 2N1l92 2N1l93 2N1l94 hFE 20 40 -- 80 - 135.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N1190 |
Motorola |
PNPgermanium transistors |
|
| 2 | 2N1191 |
Motorola |
PNPgermanium transistors |
|
| 3 | 2N1193 |
Motorola |
PNPgermanium transistors |
|
| 4 | 2N1194 |
Motorola |
PNPgermanium transistors |
|
| 5 | 2N1195 |
Motorola |
PNP germanium mesa transistors |
|
| 6 | 2N1100 |
Motorola |
PNP germanium power transistors |
|
| 7 | 2N1120 |
Motorola |
PNP germanium power transistor |
|
| 8 | 2N1131 |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 9 | 2N1131 |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 10 | 2N1131 |
Central Semiconductor |
SILICON PNP TRANSISTOR |
|
| 11 | 2N1131A |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 12 | 2N1131L |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|