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2Nl189 2Nl190(GERMANIUM) CASE31{l) ' (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.· MAXIMUM RATINGS Rating Collector-Base Voltage Symbol Value Unit VCB 45 Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage.
c, RBE = 10K) - ICER .uAdc - 600 Collector-Emitter Punch-Thru Voltage (VEB = 1 Vdc, VTVM Impedance ~ 1 M ohm - - Vpt Vdc 45 Output Capacitance ", (VCB ;: 6 Vdc, IE = 0, f = 1 MHz) - Cob pF 12.0 25 Noise Figure (VCE = 4.5 Vdc' IE = 0.5 mAdc Rg = 1 K, f = 1 kHz .4f = 1 Hz) - NF dB 5.0 15 Small-Signal Current-Gain Cutoff Frequency (VCB = 6 Vdc, IE:; ImAdc) fab 2N1l89 2N1l90 1.75 3.5 2.25 4.5 MHz -- 2-176 2N 1189, 2N 1190 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Input Impedance (VCB = 6 Vde, IE = 1 mAde, f = 1 kHz) Symbol Min TJII Mu Unit hib Ohms .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N1191 |
Motorola |
PNPgermanium transistors |
|
| 2 | 2N1192 |
Motorola |
PNPgermanium transistors |
|
| 3 | 2N1193 |
Motorola |
PNPgermanium transistors |
|
| 4 | 2N1194 |
Motorola |
PNPgermanium transistors |
|
| 5 | 2N1195 |
Motorola |
PNP germanium mesa transistors |
|
| 6 | 2N1100 |
Motorola |
PNP germanium power transistors |
|
| 7 | 2N1120 |
Motorola |
PNP germanium power transistor |
|
| 8 | 2N1131 |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 9 | 2N1131 |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 10 | 2N1131 |
Central Semiconductor |
SILICON PNP TRANSISTOR |
|
| 11 | 2N1131A |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 12 | 2N1131L |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|