Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N 1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applications where low DC current gain is essential. • Low DC Current Gain - hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A • Turn-On Time - ton = 45 ns (Max) - 2N 1131A • Turn-Off Time - toff = 35 ns (Max) - 2N1131A *MAXIM.
MAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
*Indicates JEOeC Registered Data.
Symbol 2N1131,A 2N1991
8Je
75
62.5
8JA
250
208
Unit
°elW
°e/w
PNPSILICON AMPLIFIER
AND SWITCHING TRANSISTORS
2N1131 2N1131A
II
+O="r0r9:=mj1~~j ~EATING
0500
L
PLANE 0M,0!1.!9iDlA
Pin 1 Emili.,
CASE 79 (1)
Tccanvel1incheslomitlimetersmulliplybyZ5.4. AIIJEOEC TO
·39 dimensions and notl?S apply.
2N1991
QrFr-°
·JmJ5-~ I~ O."O """
T
T
LIT 1f IT
o.ol
iilil9
s
·-1-l1L
·o
..02_9
'
y
~ 0&Sl ',,,",,,","_W"mel!lh;tll'"'m1.15._gr,a,m,,,,,,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N1131 |
Motorola |
PNP SILICON ANNULAR TRANSISTORS |
|
| 2 | 2N1131 |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 3 | 2N1131 |
Central Semiconductor |
SILICON PNP TRANSISTOR |
|
| 4 | 2N1131L |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 5 | 2N1132 |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 6 | 2N1132 |
TT |
SILICON PLANAR PNP TRANSISTOR |
|
| 7 | 2N1132 |
Motorola |
SWITCHING TRANSISTOR |
|
| 8 | 2N1132A |
Motorola |
SWITCHING TRANSISTOR |
|
| 9 | 2N1132L |
Microsemi |
LOW POWER PNP SILICON TRANSISTOR |
|
| 10 | 2N1100 |
Motorola |
PNP germanium power transistors |
|
| 11 | 2N1120 |
Motorola |
PNP germanium power transistor |
|
| 12 | 2N1141 |
Motorola |
PNP germanium mesa transistors |
|