The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The EN29LV320 features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor syst.
• Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
- 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 µA current in standby or automatic
sleep mode.
• Flexible Sector Architecture: - Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors. - 8-Kbyte sectors for Top or Bottom boot. - Sector/Sector Group protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 29LV320BTC-70 |
ETC |
MX29LV320 | |
2 | 29LV320D |
AMD |
AM29LV320D | |
3 | 29LV320T-70 |
Eon Silicon Solution |
EN29LV320 | |
4 | 29LV008BTC |
Macronix International |
MX29LV008BTC | |
5 | 29LV010 |
Eon Silicon Solution |
EN29LV010 | |
6 | 29LV040B |
Advanced Micro Devices |
AM29LV040B | |
7 | 29LV1024 |
ATMEL Corporation |
AT29LV1024 | |
8 | 29LV160B |
AMD |
16 Megabit CMOS 3 Volt-only Sector Erase Flash Memory | |
9 | 29LV160BE |
Fujitsu Media Devices |
MBM29LV160BE | |
10 | 29LV160BE |
Fujitsu Media Devices |
MBM29LV160BE | |
11 | 29LV160BT |
Macronix International |
MX29LV160BT | |
12 | 29LV160C |
Macronix International |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |