29LV010 - Eon Silicon Solution

29LV010 EN29LV010

The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 131,072 bytes. Any byte can be programmed typically in 8µs. The EN29LV010 features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV010 has .

Features

• Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for high performance 3.3 volt microprocessors.
• High performance - Full voltage range: access times as fast as 55 ns - Regulated voltage range: access times as fast as 45ns
• Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture: Eight 16 .