The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write.
a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a prog.
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits ea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 29LV160B |
AMD |
16 Megabit CMOS 3 Volt-only Sector Erase Flash Memory | |
2 | 29LV160BT |
Macronix International |
MX29LV160BT | |
3 | 29LV160C |
Macronix International |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY | |
4 | 29LV160DB |
AMD |
AM29LV160DB | |
5 | 29LV160M |
AMD |
16 Megabit 3 Volt-only Sector Erase Flash Memory | |
6 | 29LV160TE90TN |
Fujitsu Media Devices |
MBM29LV160TE90TN | |
7 | 29LV1024 |
ATMEL Corporation |
AT29LV1024 | |
8 | 29LV008BTC |
Macronix International |
MX29LV008BTC | |
9 | 29LV010 |
Eon Silicon Solution |
EN29LV010 | |
10 | 29LV040B |
Advanced Micro Devices |
AM29LV040B | |
11 | 29LV256M |
Advanced Micro Devices |
AM29LV256M | |
12 | 29LV320 |
Eon Silicon Solution |
EN29LV320 |