at any time, without notice. This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not finalize a design with this information. The 1.8 Volt Intel StrataFlash® Wireless Memory with 3.0 Volt I/O datasheet may contain design defects or errors known as errata which may ca.
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High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Buffered Enhanced Factory Programming (Buffered EFP): 3.5 µs/byte (Typ) — 1.8 V low-power buffered and non-buffered programming @ 10 µs/byte (Typ)
■ Architecture — Asymmetrically-blocked architecture — Multiple 8-Mbit partitions: 64Mb and 128Mb devices — Multiple 16-Mbit partitions: 256Mb devices — Four 16-KWord parameter b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 28F256L18 |
Intel Corporation |
(28FxxxL18) StrataFlash Wireless Memory | |
2 | 28F256 |
STMicroelectronics |
256K(32K x8 / Chip Erase)FLASH MEMORY | |
3 | 28F256 |
Advanced Micro Devices |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory | |
4 | 28F256 |
Advanced Micro Devices |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms | |
5 | 28F256 |
STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory | |
6 | 28F256J3 |
Intel |
(28FxxxJ3) Strata Flash Memory | |
7 | 28F256J3C |
Intel |
Strata Flash Memory | |
8 | 28F256P30B |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
9 | 28F2000PPC |
MXIC |
MX28F2000P | |
10 | 28F200B5 |
Intel |
SMART 5 BOOT BLOCK FLASH MEMORY | |
11 | 28F200BL-B |
Intel |
LOW-POWER BOOT BLOCK FLASH MEMORY | |
12 | 28F200BL-T |
Intel |
LOW-POWER BOOT BLOCK FLASH MEMORY |