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High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) — 1.8 V low-power buffered programming at 7 µs/byte (Typ)
■ Architecture — Asymmetrically-blocked architecture — Multiple 8-Mbit partitions: 64-Mbit and 128Mbit devices — Multiple 16-Mbit partitions: 256-Mbit devices — Four 16-Kword parameter blocks: top or bottom.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 28F256L30 |
Intel Corporation |
(28FxxxL30) Wireless Memory | |
2 | 28F256 |
STMicroelectronics |
256K(32K x8 / Chip Erase)FLASH MEMORY | |
3 | 28F256 |
Advanced Micro Devices |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory | |
4 | 28F256 |
Advanced Micro Devices |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms | |
5 | 28F256 |
STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory | |
6 | 28F256J3 |
Intel |
(28FxxxJ3) Strata Flash Memory | |
7 | 28F256J3C |
Intel |
Strata Flash Memory | |
8 | 28F256P30B |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
9 | 28F2000PPC |
MXIC |
MX28F2000P | |
10 | 28F200B5 |
Intel |
SMART 5 BOOT BLOCK FLASH MEMORY | |
11 | 28F200BL-B |
Intel |
LOW-POWER BOOT BLOCK FLASH MEMORY | |
12 | 28F200BL-T |
Intel |
LOW-POWER BOOT BLOCK FLASH MEMORY |