Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Product Features Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffe.
Datasheet
■ Performance
■ Architecture
— 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High
— 125 ns Initial Access Speed (256 Mbit density only)
— 25 ns Asynchronous Page mode Reads
— 30 ns Asynchronous Page mode Reads (256Mbit density only)
— 32-Byte Write Buffer —6.8 µs per byte effective programming time
■ Software
Density at Low Cost
— High-Density Symmetrical 128-Kbyte Blocks —256 Mbit (256 Blocks) (0.18µm only) —128 Mbit (128 Blocks) —64 Mbit (64 Blocks) —32 Mbit (32 Blocks)
■ Quality and Reliability — Operating Temperature: -40 °C to +85 °C
— Program and.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 28F256J3 |
Intel |
(28FxxxJ3) Strata Flash Memory | |
2 | 28F256 |
STMicroelectronics |
256K(32K x8 / Chip Erase)FLASH MEMORY | |
3 | 28F256 |
Advanced Micro Devices |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory | |
4 | 28F256 |
Advanced Micro Devices |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms | |
5 | 28F256 |
STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory | |
6 | 28F256L18 |
Intel Corporation |
(28FxxxL18) StrataFlash Wireless Memory | |
7 | 28F256L30 |
Intel Corporation |
(28FxxxL30) Wireless Memory | |
8 | 28F256P30B |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
9 | 28F2000PPC |
MXIC |
MX28F2000P | |
10 | 28F200B5 |
Intel |
SMART 5 BOOT BLOCK FLASH MEMORY | |
11 | 28F200BL-B |
Intel |
LOW-POWER BOOT BLOCK FLASH MEMORY | |
12 | 28F200BL-T |
Intel |
LOW-POWER BOOT BLOCK FLASH MEMORY |