The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET.
• RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequenc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25N60 |
Inchange Semiconductor |
N-Channel MOSFET | |
2 | 25N621K |
HUAAN |
Metal Oxide Varistor | |
3 | 25N681K |
HUAAN |
Metal Oxide Varistor | |
4 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
5 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
6 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
7 | 25N01GVTBIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
8 | 25N01GVTCIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
9 | 25N01GVTCIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
10 | 25N01GVZEIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
11 | 25N01GVZEIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
12 | 25N05 |
Inchange Semiconductor |
N-Channel MOSFET |