logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

25N18 - Inchange Semiconductor

Download Datasheet
Stock / Price

25N18 N-Channel MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 25N18 ·ABSOLUTE MAXIMUM RATINGS(Ta.

Features


·Drain Current ID= 25A@ TC=25℃
·Drain Source Voltage : VDSS= 180V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters, motor drivers, relay drivers isc Product Specification 25N18
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 180 ±20 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~15.

Related Product

No. Partie # Fabricant Description Fiche Technique
1 25N10
ROUM
N-Channel MOSFET Datasheet
2 25N10
Unisonic Technologies
N-Channel MOSFET Datasheet
3 25N10
INCHANGE
N-Channel MOSFET Datasheet
4 25N102K
HUAAN
Metal Oxide Varistor Datasheet
5 25N112K
HUAAN
Metal Oxide Varistor Datasheet
6 25N120
IXYS Corporation
IXGH25N120 Datasheet
7 25N122K
HUAAN
Metal Oxide Varistor Datasheet
8 25N151K
HUAAN
Metal Oxide Varistor Datasheet
9 25N181K
HUAAN
Metal Oxide Varistor Datasheet
10 25N01GVSFIG
Winbond
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Datasheet
11 25N01GVSFIT
Winbond
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Datasheet
12 25N01GVTBIG
Winbond
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Datasheet
More datasheet from Inchange Semiconductor
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact