INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 25N18 ·ABSOLUTE MAXIMUM RATINGS(Ta.
·Drain Current ID= 25A@ TC=25℃
·Drain Source Voltage
: VDSS= 180V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters, motor drivers, relay drivers
isc Product Specification
25N18
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
180 ±20
V V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
60 A
PD Total Dissipation @TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25N10 |
ROUM |
N-Channel MOSFET | |
2 | 25N10 |
Unisonic Technologies |
N-Channel MOSFET | |
3 | 25N10 |
INCHANGE |
N-Channel MOSFET | |
4 | 25N102K |
HUAAN |
Metal Oxide Varistor | |
5 | 25N112K |
HUAAN |
Metal Oxide Varistor | |
6 | 25N120 |
IXYS Corporation |
IXGH25N120 | |
7 | 25N122K |
HUAAN |
Metal Oxide Varistor | |
8 | 25N151K |
HUAAN |
Metal Oxide Varistor | |
9 | 25N181K |
HUAAN |
Metal Oxide Varistor | |
10 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
11 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
12 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |