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25N10 |
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| Part Number | 25N10 |
| Manufacturer | ROUM |
| Description | These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resi... |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤36mΩ) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● LED Boost ● UPS power supply ● Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N10/I25N10/E25N10 /B25N10/D25N10 Maximum Drian-Source DC Voltage VDS 100 Maximum Gate-Drain Voltage VGS ±20 ... |
| Document |
 25N10 Data Sheet
PDF 1.22MB |
| Distributor | Stock | Price | Buy |
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