25FV101T - Sanyo

25FV101T LE25FV101T

Device Operation The LE25FV101T is a 128K x 8 CMOS sector Uerase, byte programmable serial Flash EEPROM. t4The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash eEEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better ereliability and manufacturability compared with conventional approach.

Features

CMOS Flash EEPROM Technology aSingle 3.3-Volt Read and Write Operations .DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max.) End of Write Detection: Status Register Read Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0. Hardware Data Protection Packages Available: MSOP8(225mil) .comProduct Description Device Operation The LE25FV101T.