The LE25FV051T is a 64K x 8 CMOS sector erase, byte programmable serial Flash EEPROM. The LE25FV051T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conventional approaches. The LE25FV051T erases.
CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max.) Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0,3 High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max.) End of Write Detection: Status Register Read Hardware Data Protection Packages Available: MSOP8(225mil) Product Description The LE25FV051T is a 64K x 8 CMOS sector erase,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25FV055T |
Sanyo |
LE25FV055T | |
2 | 25FV101T |
Sanyo |
LE25FV101T | |
3 | 25F005 |
Saifun |
SF25F005 | |
4 | 25F1024AN |
ATMEL |
AT25F1024AN | |
5 | 25F40 |
International Rectifier |
STANDARD RECOVERY DIODES | |
6 | 25F40 |
Vishay Siliconix |
Standard Recovery Diodes | |
7 | 25F512 |
ATMEL Corporation |
AT25F512 | |
8 | 25F512AN |
ATMEL Corporation |
AT25F512AN | |
9 | 25F80 |
International Rectifier |
STANDARD RECOVERY DIODES | |
10 | 25F80 |
Vishay Siliconix |
Standard Recovery Diodes | |
11 | 25FE102K |
maida |
Zinc Oxide Varistor | |
12 | 25FE112K |
maida |
Zinc Oxide Varistor |