The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolut.
VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 4.2 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Stead.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2010 |
TT electronics |
Double Sided Chip Resistor | |
2 | 2010DN |
Fairchild Semiconductor |
FYP2010DN | |
3 | 2011 |
BOURNS |
Fast Acting GDT Surge Arrestor | |
4 | 2012E |
YIC |
Tuning Fork SMD Quartz Crystal | |
5 | 2012ES |
YIC |
Tuning Fork SMD Quartz Crystal | |
6 | 2014VS |
Coilcraft |
High Current Power Inductors | |
7 | 2015 |
Tuofeng Semiconductor |
Single P-Channel Power MOSFET | |
8 | 2015M |
ETC |
MICROWAVEBIPOLAR | |
9 | 2016L030 |
Littelfuse |
Resettable PTC | |
10 | 2016L050 |
Littelfuse |
Resettable PTC | |
11 | 2016L075 |
Littelfuse |
Resettable PTC | |
12 | 2016L100 |
Littelfuse |
Resettable PTC |