2015 - Tuofeng Semiconductor

2015 Single P-Channel Power MOSFET

The 2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product 2015 is Pb-free and Halogen-free. Features z Trench Technology z Supper high density cell desig.

Features

z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging SOT-23 D 3 12 GS Pin configuration (Top view) Shenzhen Tuofeng Semiconductor Technology Co., Ltd Absolute Maximum ratings 2015 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c .