1S2 THRU 1S10 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere FEATURES l Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound 1 ampere operation at TA=75 ¢J with no thermal runaway Exceeds environmental standards of MIL-S-19500/228 For use in low vol.
l Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound 1 ampere operation at TA=75 ¢J with no thermal runaway Exceeds environmental standards of MIL-S-19500/228 For use in low voltage, high frequency inverters free wheeling, and polarlity protection applications R-1 l l l MECHANICAL DATA Case: Molded plastic, R-1 Terminals: Axial leads, solderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.0064 ounce, 0.181 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1S10 |
Pan Jit International Inc. |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
2 | 1S100 |
Yangzhou Yangjie |
Schottky Barrier Rectifier | |
3 | 1S100 |
Eris |
Schottky Barrier Rectifiers | |
4 | 1S100 |
Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER | |
5 | 1S150 |
Yangzhou Yangjie |
Schottky Barrier Rectifier | |
6 | 1S1553 |
Leshan Radio Company |
SWITCHING DIODES | |
7 | 1S1555 |
Leshan Radio Company |
SWITCHING DIODES | |
8 | 1S1585 |
Toshiba Semiconductor |
Silicon Diode | |
9 | 1S1586 |
Toshiba Semiconductor |
Silicon Diode | |
10 | 1S1587 |
Toshiba Semiconductor |
Silicon Diode | |
11 | 1S1588 |
Toshiba Semiconductor |
Silicon Diode | |
12 | 1S1829 |
Toshiba Semiconductor |
Silicon Rectifier |