1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. .021 (0.5) .138 (3.5) .114 (2.9) .787 (20.0) MIN. .102 (2.6) D I A . .087 (2.2) R-1 Dimensions in inches and (millimeters) Features ‧Guardring for overvoltage protection ‧Very small conduction losses ‧Low forward voltage drop ‧Component in accordance to RoHS 2002/95/EC ‧AEC-Q101 qualified Schottky Barri.
‧Guardring for overvoltage protection ‧Very small conduction losses ‧Low forward voltage drop ‧Component in accordance to RoHS 2002/95/EC ‧AEC-Q101 qualified Schottky Barrier Rectifiers Ordering Information Part Number 1Sxx Remark General 1Sxx-H Halogen Free 1Sxx-Q Automotive PRIMARY CHARACTERISTICS IF 1A VRRM 20~100V IFSM 20A VF 0.52, 0.55V, 0.65, 0.85 TJ max 125°C Mechanical Date ‧Cases: R-1 ‧Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 ‧Terminals: Lead free Plating (Tin Finish) Solderable per MIL-STD-202, Method 208 ‧Polarity: Cathode Band ‧We.
1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very .
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere 1S20 THRU 1S100 FEATURES * Low power loss,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1S10 |
Pan Jit International Inc. |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
2 | 1S150 |
Yangzhou Yangjie |
Schottky Barrier Rectifier | |
3 | 1S1553 |
Leshan Radio Company |
SWITCHING DIODES | |
4 | 1S1555 |
Leshan Radio Company |
SWITCHING DIODES | |
5 | 1S1585 |
Toshiba Semiconductor |
Silicon Diode | |
6 | 1S1586 |
Toshiba Semiconductor |
Silicon Diode | |
7 | 1S1587 |
Toshiba Semiconductor |
Silicon Diode | |
8 | 1S1588 |
Toshiba Semiconductor |
Silicon Diode | |
9 | 1S1829 |
Toshiba Semiconductor |
Silicon Rectifier | |
10 | 1S1829 |
SUNMATE |
AXIAL LEADED SILICON RECTIFIER DIODES | |
11 | 1S1830 |
Toshiba Semiconductor |
Silicon Rectifier | |
12 | 1S1830 |
SUNMATE |
AXIAL LEADED SILICON RECTIFIER DIODES |