1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, freewheeling.
● Guardring for overvoltage protection
● Very small conduction losses
● Extremely fast switching
● High forward surge capability
● High frequency operation
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
Mechanical Data
● Package: R-1
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen free
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: Color band denotes the cathode end
■Maximum Ratings (T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1S1553 |
Leshan Radio Company |
SWITCHING DIODES | |
2 | 1S1555 |
Leshan Radio Company |
SWITCHING DIODES | |
3 | 1S1585 |
Toshiba Semiconductor |
Silicon Diode | |
4 | 1S1586 |
Toshiba Semiconductor |
Silicon Diode | |
5 | 1S1587 |
Toshiba Semiconductor |
Silicon Diode | |
6 | 1S1588 |
Toshiba Semiconductor |
Silicon Diode | |
7 | 1S10 |
Pan Jit International Inc. |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
8 | 1S100 |
Yangzhou Yangjie |
Schottky Barrier Rectifier | |
9 | 1S100 |
Eris |
Schottky Barrier Rectifiers | |
10 | 1S100 |
Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER | |
11 | 1S1829 |
Toshiba Semiconductor |
Silicon Rectifier | |
12 | 1S1829 |
SUNMATE |
AXIAL LEADED SILICON RECTIFIER DIODES |