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1N4454 Discrete POWER & Signal Technologies 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise noted Paramete.
ic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max 1N4454 500 3.33 300 Units mW mW/ °C °C/W ©1997 Fairchild Semiconductor Corporation 1N4454 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR VF TA = 25°C unless otherwise noted Parameter Breakdown Voltage Reverse Current Forward Voltage Test Conditions I R = 5.0 µ A VR = 50 V VR = 50 V, TA = 150°C I F = 250 µA I F = 1.0 mA I F = 2.0 mA I F = 10 mA VR = 0, f = 1.0 MHz I F = 10 mA, VR = 1.0 V, I rr = 1.0 mA, RL = 100 Ω Min 75 Max 100 100 575 650 710 1.0 4.0 4.0 .
1N4454 - Compensated Deuices Incorporated
• 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 • SWITCHING DIODE • HERMETICALLY SEALED .
1N4454 - Central Semiconductor
Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.ce.
1N4454 - Digitron Semiconductors
1N4305, 1N4454 High-reliability discrete products and engineering services since 1977 SWITCHING RECTFIERS FEATURES .
1N4454 - EIC
1N4454 FEATURES : • High switching speed: max. 4 ns • General application • Continuous reverse voltage:max. 75 V • peak .
1N4454 - Rectron
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4454 1N4454 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items S.
1N4454 - Vishay
Small-Signal Diode DO-204AH (DO-35 Glass) 1N4454 Vishay Semiconductors formerly General Semiconductor Reverse Voltage 1.
1N4454 - MA-COM
1N4454 & 1N4454-1 Silicon Switching Diode Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144 Metallu.
1N4454 - TAITRON
Reverse Voltage Peak Reverse Voltage RMS Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current Po.
1N4454 - ON Semiconductor
AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed ve.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N4450 |
GOOD-ARK Electronics |
SILICON EPITAXIAL PLANAR DIODES |
|
| 2 | 1N4450 |
EIC |
HIGH SPEED SWITCHING DIODE |
|
| 3 | 1N4450 |
Digitron Semiconductors |
SWITCHING RECTIFIER |
|
| 4 | 1N4451 |
GOOD-ARK Electronics |
SILICON EPITAXIAL PLANAR DIODES |
|
| 5 | 1N4453 |
GOOD-ARK Electronics |
SILICON EPITAXIAL PLANAR DIODES |
|
| 6 | 1N4453 |
Digitron Semiconductors |
TIGHT TOLERANCE STABISTORS |
|
| 7 | 1N4454 |
NTE |
High Conductance Ultra Fast Diode |
|
| 8 | 1N4454 |
Diodes Incorporated |
SILICON SWITCHING DIODE |
|
| 9 | 1N4454-1 |
Compensated Deuices Incorporated |
SWITCHING DIODE |
|
| 10 | 1N4454-1 |
MA-COM |
Silicon Switching Diode |
|
| 11 | 1N4454UR |
Compensated Deuices Incorporated |
SWITCHING DIODE |
|
| 12 | 1N4454UR-1 |
Compensated Deuices Incorporated |
SWITCHING DIODE |
|