• 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N4454 1N4454-1 MAXIMUM RATINGS Junction Temperature: -55°C to +175°C Storage Temperature: -55°C to +175°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.33 mA/°C Above TA = +.
Any. µA 0.1 µA 100 pF 2.0 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] IN4454 and 1N4454-1 1000 100 IF - Forward Current - (mA) 10 10 0ºC 15 0º C 1 25º C 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2 1.3 1000 100 150ºC 10 IR - Reverse Current - (µA) 100ºC 1 0.1 25ºC .01 -65ºC -65ºC NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Vol.
1N4454 & 1N4454-1 Silicon Switching Diode Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144 Metallu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N4454 |
NTE |
High Conductance Ultra Fast Diode | |
2 | 1N4454 |
Fairchild Semiconductor |
High Conductance Ultra Fast Diode | |
3 | 1N4454 |
Diodes Incorporated |
SILICON SWITCHING DIODE | |
4 | 1N4454 |
ON Semiconductor |
High Conductance Ultra Fast Diode | |
5 | 1N4454 |
Rectron |
SIGNAL DIODE | |
6 | 1N4454 |
Compensated Deuices Incorporated |
SWITCHING DIODE | |
7 | 1N4454 |
Central Semiconductor |
Silicon switching diode | |
8 | 1N4454 |
Digitron Semiconductors |
SWITCHING RECTFIERS | |
9 | 1N4454 |
Vishay |
Small-Signal Diode | |
10 | 1N4454 |
EIC |
HIGH SPEED SWITCHING DIODE | |
11 | 1N4454 |
MA-COM |
Silicon Switching Diode | |
12 | 1N4454 |
TAITRON |
SMD Switching Diode |