160NTD - Naina Semiconductor

160NTD Thyristor-Diode

Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 1 160NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum averag.

Features

•
•
•
• Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 1 160NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 160 350 5100 120 Units A A A kA s M3 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature rang.