This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP160N3LL Table 1: Device summary Marking Package 160N3LL TO-220 Packing Tube June 2015 DocID025073 Rev 3 This is information on a product in full pr.
Order code VDS RDS(on) max.
ID
PTOT
STP160N3LL 30 V 3.2 mΩ 120 A 136 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP160N3LL
Table 1: Device summary
Marking
Package
160N3LL
TO-220
Packing Tube
June 2015
DocID025073 Rev 3
This is information on a product in full production.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 160N4F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | 160N60UFD |
Fairchild Semiconductor |
Ultrafast IGBT | |
3 | 160N75F3 |
STMicroelectronics |
N-channel MOSFET | |
4 | 160NDD |
Naina Semiconductor |
Diode-Diode | |
5 | 160NS3LL |
STMicroelectronics |
N-channel MOSFET | |
6 | 160NTD |
Naina Semiconductor |
Thyristor-Diode | |
7 | 160NTT |
Naina Semiconductor |
Thyristor-Thyristor | |
8 | 1600EXD25 |
Toshiba Semiconductor |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) | |
9 | 1600FXD25 |
Toshiba Semiconductor |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) | |
10 | 1601B |
ETC |
16 CHAR 1 LINE LCD PANEL | |
11 | 1602A-1 |
EONE |
LCD | |
12 | 1602F |
ETC |
Chip On Glass technology |