This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low .
Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2mΩ 4.5mΩ 4.5mΩ ID 120A (1)
3
120A (1) 120A
(1)
1
2
TO-220
TO-247
1. Current limited by package
■
■
Ultra low on-resistance 100% Avalanche tested
3 1
D²PAK
Description
This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics an.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 160N3LL |
STMicroelectronics |
N-channel MOSFET | |
2 | 160N4F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | 160N60UFD |
Fairchild Semiconductor |
Ultrafast IGBT | |
4 | 160NDD |
Naina Semiconductor |
Diode-Diode | |
5 | 160NS3LL |
STMicroelectronics |
N-channel MOSFET | |
6 | 160NTD |
Naina Semiconductor |
Thyristor-Diode | |
7 | 160NTT |
Naina Semiconductor |
Thyristor-Thyristor | |
8 | 1600EXD25 |
Toshiba Semiconductor |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) | |
9 | 1600FXD25 |
Toshiba Semiconductor |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) | |
10 | 1601B |
ETC |
16 CHAR 1 LINE LCD PANEL | |
11 | 1602A-1 |
EONE |
LCD | |
12 | 1602F |
ETC |
Chip On Glass technology |