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Preliminary Power MOSFET The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UT.
* 15A, 600V, RDS(ON)=0.44Ω @ VGS=10V
* Typically 23.6pF low CRSS
* High switching speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Package TO-247 S: Source 1 G Pin Assignment 2 3 D S Packing Tube
Ordering Number Lead Free Halogen Free 15N60L-T47-T 15N60G-T47-T Note: Pin Assignment: G: Gate D: Drain
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QW-R502-485.a
15N60
PARAMETER Drain to Source Voltage Gate to Source Voltage Avalanche Current (Note 1)
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless ot.
15N60 - Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Stati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 15N60-MT |
UTC |
600V N-CHANNEL POWER MOSFET |
|
| 2 | 15N60C3 |
Infineon |
Power Transistor |
|
| 3 | 15N60DM6 |
STMicroelectronics |
N-Channel MOSFET |
|
| 4 | 15N60HS |
Infineon |
High Speed IGBT |
|
| 5 | 15N65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 15N65 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | 15N65-MT |
UTC |
N-CHANNEL MOSFET |
|
| 8 | 15N65C3 |
Infineon Technologies |
Power Transistor |
|
| 9 | 15N65K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 15N03GH |
Advanced Power Electronics |
AP15N03GH |
|
| 11 | 15N03H |
Advanced Power Electronics |
AP15N03H |
|
| 12 | 15N03K |
Advanced Power Electronics |
AP15N03K |
|