15N60HS - Infineon

15N60HS High Speed IGBT

SGB15N60HS ^ High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temp.

Features

time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1) 2) ICpul s VGE tSC Ptot Tj ,Tstg Tj(tl) - 60 60 ±20 ±30 10 138 -55...+150 175 245 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev 2.3 Oct 06 Power Semiconductors Free Datasheet http://www.datasheet4u.com/ SGB15N60HS ^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
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