100N3LLH6 - STMicroelectronics

100N3LLH6 N-channel Power MOSFET

bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET exhibits the lowest RDS(on) in all t(spackages. PowerFLAT™ ( 5x6 ) Figure 1. Internal schematic diagram lete ProducTable 1. Device summary soOrder code Marking Ob STL100N3LLH6 100N3LLH6 Package Pow.

Features

STL100N3LLH6 N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb
■ RDS(on)
* Qg industry benchmark
■ Extremely low on-resistance RDS(on) )
■ High avalanche ruggedness t(s
■ Low gate drive power losses uc
■ Very low switching gate charge rodApplication P
■ Switching applications oleteDescription bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power .