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IS42S32200E |
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| Part Number | IS42S32200E |
| Manufacturer | ISSI |
| Description | The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous i... |
| Features |
• Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.3V power supply • LVTTL interface • Programmable burst length: (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Self refresh modes • 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst terminatio... |
| Document |
 IS42S32200E Data Sheet
PDF 736.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS42S32200 |
ISSI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
|
| 2 | IS42S32200L |
ISSI |
64-MBIT SYNCHRONOUS DYNAMIC RAM |
|
| 3 | IS42S32200N |
ISSI |
64-MBIT SYNCHRONOUS DYNAMIC RAM |
|
| 4 | IS42S32160D |
ISSI |
512Mb SDRAM |
|
| 5 | IS42S32160F |
ISSI |
512Mb SDRAM |
|