HCS70R660S |
Part Number | HCS70R660S |
Manufacturer | SemiHow |
Description | HCS70R660S HCS70R660S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances ... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
Jan 2015
BVDSS = 700 V RDS(on) typ ȍ ID = 6.2 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC ... |
Document |
HCS70R660S Data Sheet
PDF 181.42KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HCS70R600S |
SemiHow |
N-Channel Super Junction MOSFET | |
2 | HCS70R350E |
SemiHow |
700V N-Channel Super Junction MOSFET | |
3 | HCS70R360S |
SemiHow |
N-Channel Super Junction MOSFET | |
4 | HCS74MS |
Intersil Corporation |
Radiation Hardened Dual-D Flip-Flop | |
5 | HCS74T |
Intersil Corporation |
Radiation Hardened Dual-D Flip-Flop |