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IRGB4064DPbF |
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| Part Number | IRGB4064DPbF |
| Manufacturer | International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RB... |
| Features |
• Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 97113 IRGB4064DPb... |
| Document |
 IRGB4064DPbF Data Sheet
PDF 371.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGB4060DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGB4061DPbF |
International Rectifier |
IGBT |
|
| 3 | IRGB4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGB4065PBF |
International Rectifier |
IGBT |
|
| 5 | IRGB4045DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|