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D5NM50 |
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| Part Number | D5NM50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista... |
| Features |
52
3 2 1
IPAK TO-251 (Add Suffix “-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS VDGR VGS
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( •)Pulse width limited by safe operating area September 2002 Value 500 500 ±30 7.5 4.7 30 100 0.8... |
| Document |
 D5NM50 Data Sheet
PDF 421.44KB |
| Distributor | Stock | Price | Buy |
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