PTVA120251EA Infineon Thermally-Enhanced High Power RF LDMOS FET Datasheet, en stock, prix

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PTVA120251EA

Infineon
PTVA120251EA
PTVA120251EA PTVA120251EA
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Part Number PTVA120251EA
Manufacturer Infineon (https://www.infineon.com/)
Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down fla...
Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2 Output Power (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 Efficiency 55 70 60 50 45 40 35 30 18 Output Power 50 40 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 20 1400 MHz a120251ea-v2-gr1a``` 10 22 26 30 34 Input Power (dBm) Features
• Unmatched input and outp...

Document Datasheet PTVA120251EA Data Sheet
PDF 635.41KB
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