IRLI530G |
Part Number | IRLI530G |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eli... |
Features |
• Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-indu... |
Document |
IRLI530G Data Sheet
PDF 896.07KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRLI530A |
Fairchild Semiconductor |
HEXFET Power MOSFET | |
2 | IRLI530G |
International Rectifier |
Power MOSFET | |
3 | IRLI530N |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRLI530NPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLI530NPbF |
Infineon |
Power MOSFET |