PTVA047002EV Infineon Thermally-Enhanced High Power RF LDMOS FET Datasheet, en stock, prix

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PTVA047002EV

Infineon
PTVA047002EV
PTVA047002EV PTVA047002EV
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Part Number PTVA047002EV
Manufacturer Infineon (https://www.infineon.com/)
Description The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange...
Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg 34 30 Drain Efficiency 26 22 18 Gain 14 ptva047002ev_g5 450 500 550 600 650 700 750 800 850 Frequency (MHz) Features
• Input matched
• Integrated ESD protection
• Low thermal resistance
• High gain
• Thermally enhanced pack...

Document Datasheet PTVA047002EV Data Sheet
PDF 345.07KB
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