1SS337 |
Part Number | 1SS337 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications 1SS337 Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.88 V (typ.) z Fast reverse recover... |
Features |
ture/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
VF (1) VF (2) VF (3) IR (1) IR (2)
CT trr
Test Circuit
Test Condition
― IF = 10 m... |
Document |
1SS337 Data Sheet
PDF 284.91KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 1SS336 |
Toshiba Semiconductor |
Diode | |
2 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
3 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES | |
4 | 1SS301 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
5 | 1SS301 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |