IPG20N10S4-36A |
Part Number | IPG20N10S4-36A |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPG20N10S4-36A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product... |
Features |
• Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 100 V 36 mW 20 A PG-TDSON-8-10 Type IPG20N10S4-36A Package PG-TDSON-8-10 Marking 4N1036 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single ... |
Document |
IPG20N10S4-36A Data Sheet
PDF 269.19KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG20N10S4L-22 |
Infineon Technologies |
Power-Transistor | |
2 | IPG20N10S4L-22A |
Infineon |
Power-Transistor | |
3 | IPG20N10S4L-35 |
Infineon |
Power-Transistor | |
4 | IPG20N10S4L-35A |
Infineon Technologies |
Power-Transistor | |
5 | IPG20N04S4-08 |
Infineon |
Power Transistor |