OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N10S4L-35 Product Summary V DS R 4) DS(on),max ID 100 V 35 mW 20 A PG-TDSON-8-4 Type IPG20N10S4L-35 Package Marking PG.
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N10S4L-35
Product Summary
V DS
R
4) DS(on),max
ID
100 V 35 mW 20 A
PG-TDSON-8-4
Type IPG20N10S4L-35
Package
Marking
PG-TDSON-8-4 4N10L35
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPG20N10S4L-35A |
Infineon Technologies |
Power-Transistor | |
2 | IPG20N10S4L-22 |
Infineon Technologies |
Power-Transistor | |
3 | IPG20N10S4L-22A |
Infineon |
Power-Transistor | |
4 | IPG20N10S4-36A |
Infineon |
Power-Transistor | |
5 | IPG20N04S4-08 |
Infineon |
Power Transistor | |
6 | IPG20N04S4-08A |
Infineon |
Power-Transistor | |
7 | IPG20N04S4-09 |
Infineon |
Power Transistor | |
8 | IPG20N04S4-12 |
Infineon |
Power Transistor | |
9 | IPG20N04S4-12A |
Infineon |
Power-Transistor | |
10 | IPG20N04S4L-07 |
Infineon |
Power Transistor | |
11 | IPG20N04S4L-07A |
Infineon |
Power-Transistor | |
12 | IPG20N04S4L-08 |
Infineon |
Power Transistor |