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EN29F010 |
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| Part Number | EN29F010 |
| Manufacturer | Eon Silicon Solution |
| Description | The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors of 16Kby... |
| Features |
• 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors • High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s typical • Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current • Low Power Active Current - 12mA typical... |
| Document |
 EN29F010 Data Sheet
PDF 424.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EN29F002 |
ETC |
2 Megabit (256K x 8-bit) Flash Memory |
|
| 2 | EN29F002A |
ETC |
2 Megabit (256K x 8-bit) Flash Memory |
|
| 3 | EN29F002N |
ETC |
2 Megabit (256K x 8-bit) Flash Memory |
|
| 4 | EN29F040 |
ETC |
4 Megabit (512K x 8-bit) Flash Memory |
|
| 5 | EN29F040A |
EON |
4 Megabit (512K x 8-bit) Flash Memory |
|