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IXBH5N160G |
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| Part Number | IXBH5N160G |
| Manufacturer | IXYS |
| Description | High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Preliminary data sheet C TO-220 AB (IXBP) G C E C (TAB... |
| Features |
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability • industry standard package - TO-220AB - TO-247AD epoxy meets UL94V-0 Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 321 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623... |
| Document |
 IXBH5N160G Data Sheet
PDF 24.62KB |
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