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CEP12N6 |
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| Part Number | CEP12N6 |
| Manufacturer | CET |
| Description | CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N6 CEB12N6 CEF12N6 VDSS 600V 600V 600V RDS(ON) 0.65Ω 0.65Ω 0.65Ω ID 12A 12A 12A d @VG... |
| Features |
Type CEP12N6 CEB12N6 CEF12N6
VDSS 600V 600V
600V
RDS(ON) 0.65Ω 0.65Ω
0.65Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ... |
| Document |
 CEP12N6 Data Sheet
PDF 392.89KB |
| Distributor | Stock | Price | Buy |
|---|
