FDS8958A_F085 |
Part Number | FDS8958A_F085 |
Manufacturer | Fairchild Semiconductor |
Description | These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-s... |
Features |
• Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package • Qualified to AEC Q101 • RoHS Compliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation (Note 1... |
Document |
FDS8958A_F085 Data Sheet
PDF 743.95KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS8958A-F085 |
ON Semiconductor |
Dual N&P-Channel MOSFET | |
2 | FDS8958A |
Fairchild Semiconductor |
Dual-Channel MOSFET | |
3 | FDS8958 |
Fairchild Semiconductor |
Dual N & P-Channel PowerTrench MOSFET | |
4 | FDS8958B |
Fairchild Semiconductor |
MOSFET | |
5 | FDS8958B |
ON Semiconductor |
Dual N & P-Channel Power MOSFET |