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L2SB1197KQLT3G |
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| Part Number | L2SB1197KQLT3G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar... |
| Features |
−0.8 0.2 150 −55 to 150
Unit V V V A W °C °C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
Cob −
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
− 390 −
200 − MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hF... |
| Document |
 L2SB1197KQLT3G Data Sheet
PDF 106.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | L2SB1197KQLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 2 | L2SB1197KQLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 3 | L2SB1197KRLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 4 | L2SB1197KRLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 5 | L2SB1197KRLT3G |
Leshan Radio Company |
Low Frequency Transistor |
|