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L2SB1197KQLT1 |
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| Part Number | L2SB1197KQLT1 |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.DataSheet4U.com ƽEpitaxial planar type. ƽNPN complem... |
| Features |
toff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
Cob −
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
− 390 −
200 − MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
1
BASE
3
COLLECTOR
2
EMITTER
Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −4V IC/IB= −0.5A/ −50mA VCE= −3V, IC= −100mA VCE= −5V, IE=50mA, f=100MHz VCB= −10V, IE=0A, f=1MHz
L2SB1197KLT1-1/3
www.DataSheet4U.com
LESHAN RAD... |
| Document |
 L2SB1197KQLT1 Data Sheet
PDF 119.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | L2SB1197KQLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 2 | L2SB1197KQLT3G |
Leshan Radio Company |
Low Frequency Transistor |
|
| 3 | L2SB1197KRLT1 |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 4 | L2SB1197KRLT1G |
Leshan Radio Company |
Low Frequency Transistor PNP Silicon |
|
| 5 | L2SB1197KRLT3G |
Leshan Radio Company |
Low Frequency Transistor |
|