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UPA2210T1M |
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| Part Number | UPA2210T1M |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 29 mΩ MA... |
| Features |
• Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS = −2.5 V, ID = −3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS = −1.8 V, ID = −3.6 A) • Built-in gate protection diode • −1.8 V Gate drive available ORDERING INFORMATION PART NUMBER μ PA2210T1M-T1-AT Note μ PA2210T1M-T2-AT Note PACKING 8 mm embossed taping 3000 p/reel PACKAGE 8-pin VSOF (1629) 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.145±0.05 0 to 0.025 1.9±0.1 1.6±0.1 1 0.32±... |
| Document |
 UPA2210T1M Data Sheet
PDF 294.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPA2211T1M |
Renesas |
P-CHANNEL MOS FET |
|
| 2 | UPA2200T1M |
Renesas |
N-CHANNEL MOS FET |
|
| 3 | UPA2201T1M |
Renesas |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
|
| 4 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |
|
| 5 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |
|