UPA2201T1M - Renesas

UPA2201T1M N-CHANNEL MOS FIELD EFFECT TRANSISTOR

The μ PA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A) • Built-in gate protection diode • 2.5 V Gate drive available ORDERING INFORMATION.

Features

• Low on-state resistance RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A) RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
• Built-in gate protection diode
• 2.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2201T1M-T1-AT Note μ PA2201T1M-T2-AT Note 8 mm embossed taping 8-pin VSOF (1629) 3000 p/reel 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.145±0.05 0 to 0.025 1.9±0.1 1.6±0.1 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S 0.05 S 1, 2, 3, 6.