UPA2211T1M - Renesas

UPA2211T1M P-CHANNEL MOS FET

The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A) RDS(on)3 = 66 mΩ MAX. (VGS = −1.8 V, ID = −3.8 A) • Built-in gate protection di.

Features

• Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A) RDS(on)3 = 66 mΩ MAX. (VGS = −1.8 V, ID = −3.8 A)
• Built-in gate protection diode
• −1.8 V Gate drive available ORDERING INFORMATION PART NUMBER μ PA2211T1M-T1-AT Note μ PA2211T1M-T2-AT Note PACKING 8 mm embossed taping 3000 p/reel PACKAGE 8-pin VSOF (1629) 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.145±0.05 0 to 0.025 1.9±0.1 1.6±0.1 1 0.32±.